Nafria, M.: search on Z-Library

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1

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 443 KB

english, 2009

2

Cryo-Electron Microscopy: Moving Beyond X-Ray Crystal Structures for Drug Receptors and Drug Development

García-Nafría, Javier, Tate, Christopher G.

Journal:

Annual Review of Pharmacology

Year:

2020

Language:

english

File:

PDF, 6.23 MB

english, 2020

3

Fine-Tuning Mybl2 Is Required for Proper Mesenchymal-to-Epithelial Transition during Somatic Reprogramming

Ward, Carl, Volpe, Giacomo, Cauchy, Pierre, Ptasinska, Anetta, Almaghrabi, Ruba, Blakemore, Daniel, Nafria, Monica, Kestner, Doris, Frampton, Jon, Murphy, George, Buganim, Yosef, Kaji, Keisuke, García

Journal:

Year:

2018

Language:

english

File:

PDF, 4.74 MB

english, 2018

4

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Experimental Monitoring of Aging in CMOS RF Linear Power Amplifiers: Correlation Between Device and Circuit Degradation

Rodriguez, Rosana, Crespo-Yepes, Albert, Martin-Martinez, Javier, Nafria, Montserrat, Aragones, Xavier, Mateo, Diego, Barajas, Enrique

Year:

2020

File:

PDF, 1.07 MB

2020

5

FinFET and MOSFET preliminary comparison of gate oxide reliability

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 286 KB

english, 2006

6

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

Amat, E., Rodriguez, R., Gonzalez, M.B., Martin-Martinez, J., Nafria, M., Aymerich, X., Machkaoutsan, V., Bauer, M., Verheyen, P., Simoen, E.

Year:

2010

Language:

english

File:

PDF, 338 KB

english, 2010

7

SPICE modelling of hot-carrier degradation in Si1–xGex S/D and HfSiON based pMOS transistors

J. Martin-Martinez, E. Amat, M.B. Gonzalez, P. Verheyen, R. Rodríguez, M. Nafría, X. Aymerich, E. Simoen

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 504 KB

english, 2010

8

New Weighted Time Lag Method for the Analysis of Random Telegraph Signals

Martin-Martinez, Javier, Diaz, Javier, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.11 MB

english, 2014

9

Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions

Moras, M., Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X., Simoen, E.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.44 MB

english, 2014

10

Monitoring defects in III–V materials: A nanoscale CAFM study

Iglesias, V., Wu, Q., Porti, M., Nafría, M., Bersuker, G., Cordes, A.

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 2.55 MB

english, 2015

11

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

V. Iglesias, M. Lanza, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, L.F. Liu, J.F. Kang, G. Bersuker, K. Zhang, Z.Y. Shen

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 894 KB

english, 2012

12

Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

Amat, E., Kauerauf, T., Degraeve, R., De Keersgieter, A., Rodriguez, R., Nafria, M., Aymerich, X., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 287 KB

english, 2009

13

Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films

R. Rodríguez, E. Miranda, M. Nafría, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 376 KB

english, 1998

14

A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction

E Miranda, J Suñé, R Rodríguez, M Nafría, X Aymerich

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 309 KB

english, 1999

15

Model-independent determination of the degradation dynamics of thin SiO2 films

R. Rodríguez, M. Nafría, E. Miranda, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 323 KB

english, 1999

16

Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-$k$ -Based Devices

Amat, Esteve, Kauerauf, Thomas, Degraeve, Robin, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2011

Language:

english

File:

PDF, 363 KB

english, 2011

17

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs

J. Martín-Martínez, S. Gerardin, R. Rodríguez, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 634 KB

english, 2007

18

RELAB: a tool to include MOSFETs variability, BTI aging and dielectric breakdown in SPICE simulators

Martin-Martinez, J., Moras, M., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

Analog Integrated Circuits and Signal Processing

Year:

2014

Language:

english

File:

PDF, 1.53 MB

english, 2014

19

Breakdown of thin gate silicon dioxide films—A review

M. Nafría, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1996

Language:

english

File:

PDF, 1.41 MB

english, 1996

20

Analysis of the degradation and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress procedure

Rodriguez, R., Nafria, M., Miranda, E., Sune, J., Aymerich, X.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 121 KB

english, 2000

21

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Bayerl, Albin, Lanza, Mario, Aguilera, Lidia, Porti, Marc, Nafría, Montserrat, Aymerich, Xavier, Gendt, Stefan de

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

22

[IEEE 2017 IEEE International Symposium on Circuits and Systems (ISCAS) - Baltimore, MD, USA (2017.5.28-2017.5.31)] 2017 IEEE International Symposium on Circuits and Systems (ISCAS) - A size-adaptive time-step algorithm for accurate simulation of aging in analog ICs

Martin-Lloret, P., Toro-Frias, A., Martin-Martinez, J., Castro-Lopez, R., Roca, E., Rodriguez, R., Nafria, M., Fernandez, F.V.

Year:

2017

Language:

english

File:

PDF, 352 KB

english, 2017

23

Three new species of the genus Neuquenaphis (Hemiptera, Aphididae, Spicaphidinae) from southernmost South America

NAFRÍA, JUAN MANUEL NIETO, DOHLEN, CAROL D. VON, BROWN, PAUL A., DURANTE, M. PILAR MIER, ORTEGO, JAIME, CIRUELOS, SARA I. LÓPEZ, LICHT, MEGAN

Journal:

Year:

2019

File:

PDF, 5.17 MB

2019

24

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Crespo-Yepes, A., Martín-Martínez, J., Rodríguez, R., Nafría, M., Aymerich, X.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.26 MB

english, 2013

25

Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

Maestro, M., Martin-Martinez, J., Diaz, J., Crespo-Yepes, A., Gonzalez, M.B., Rodriguez, R., Campabadal, F., Nafria, M., Aymerich, X.

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 775 KB

english, 2015

26

Influence of the manufacturing process on the electrical properties of thin (

M. Lanza, M. Porti, M. Nafria, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier, G. Jaschke

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 1.66 MB

english, 2007

27

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

N. Ayala, J. Martin-Martinez, R. Rodriguez, M.B. Gonzalez, M. Nafria, X. Aymerich, E. Simoen

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 403 KB

english, 2012

28

Competing Degradation Mechanisms in Short-Channel Transistors Under Channel Hot-Carrier Stress at Elevated Temperatures

Amat, E., Kauerauf, T., Degraeve, R., Rodriguez, R., Nafria, M., Aymerich, X., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 263 KB

english, 2009

29

The species of Uroleucon (Hemiptera: Aphididae) living on Adesmia (Fabaceae) in Argentina, with the description of a new species

NAFRÍA, JUAN MANUEL NIETO, VON DOHLEN, CAROL D., MORENO-GONZÁLEZ, VÍCTOR, ORTEGO, JAIME, DURANTE, M. PILAR MIER

Journal:

Year:

2019

File:

PDF, 1.09 MB

2019

30

Reversible dielectric breakdown of thin gate oxides in MOS devices

J. Suñé, M. Nafría, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1993

Language:

english

File:

PDF, 493 KB

english, 1993

31

Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale

L. Aguilera, M. Porti, M. Nafría, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 393 KB

english, 2005

32

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Shi, Yuanyuan, Ji, Yanfeng, Hui, Fei, Nafria, Montserrat, Porti, Marc, Bersuker, Gennadi, Lanza, Mario

Journal:

Advanced Electronic Materials

Year:

2015

Language:

english

File:

PDF, 916 KB

english, 2015

33

High field dynamic stress of thin SiO2 films

M. Nafría, J. Suñé, D. Yélamos, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1995

Language:

english

File:

PDF, 600 KB

english, 1995

34

[IEEE 2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) - Lausanne, Switzerland (2019.7.15-2019.7.18)] 2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) - TiDeVa: A Toolbox for the Automated and Robust Analysis of Time-Dependent Variability at Transistor Level

Saraza-Canflanca, P., Diaz-Fortuny, J., Castro-Lopez, R., Roca, E., Martin-Martinez, J., Rodriguez, R., Nafria, M., Fernandez, F.V.

Year:

2019

Language:

english

File:

PDF, 1.14 MB

english, 2019

35

[IEEE 2019 Design, Automation & Test in Europe Conference & Exhibition (DATE) - Florence, Italy (2019.3.25-2019.3.29)] 2019 Design, Automation & Test in Europe Conference & Exhibition (DATE) - Generation of Lifetime-Aware Pareto-Optimal Fronts Using a Stochastic Reliability Simulator

Toro-Frias, A., Saraza-Canflanca, P., Passos, F., Martin-Lloret, P., Castro-Lopez, R., Roca, E., Martin-Martinez, J., Rodriguez, R., Nafria, M., Fernandez, F. V.

Year:

2019

Language:

english

File:

PDF, 303 KB

english, 2019

36

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs

Velayudhan, V., Gamiz, F., Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

37

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Threading dislocations in III-V semiconductors: Analysis of electrical conduction

Iglesias, V., Porti, M., Couso, C., Wu, Q., Claramunt, S., Nafria, M., Miranda, E., Domingo, N., Bersuker, G., Cordes, A.

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

38

Analysis of the evolution of the trapped charge distributions in 10nm SiO2 films during DC and bipolar dynamic stress

R. Rodriguez, M. Nafria, J. Suñe, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1997

Language:

english

File:

PDF, 305 KB

english, 1997

39

Time-Dependent Variability Related to BTI Effects in MOSFETs: Impact on CMOS Differential Amplifiers

Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 515 KB

english, 2009

40

A Flat BAR Protein Promotes Actin Polymerization at the Base of Clathrin-Coated Pits

Almeida-Souza, Leonardo, Frank, Rene A.W., García-Nafría, Javier, Colussi, Adeline, Gunawardana, Nushan, Johnson, Christopher M., Yu, Minmin, Howard, Gillian, Andrews, Byron, Vallis, Yvonne, McMahon,

Journal:

Year:

2018

Language:

english

File:

PDF, 7.26 MB

english, 2018

41

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 493 KB

english, 2010

42

Failure physics of ultra-thin SiO 2 gate oxides near their scaling limit

Suñé, J, Nafría, M, Miranda, E, Oriols, X, Rodríguez, R, Aymerich, X

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 158 KB

english, 2000

43

Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy

Berthold, Tobias, Benstetter, Guenther, Frammelsberger, Werner, Rodríguez, Rosana, Nafría, Montserrat

Journal:

Thin Solid Films

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

44

[IEEE 2019 IEEE International Symposium on Circuits and Systems (ISCAS) - Sapporo, Japan (2019.5.26-2019.5.29)] 2019 IEEE International Symposium on Circuits and Systems (ISCAS) - Aging in CMOS RF Linear Power Amplifiers: Experimental Comparison and Modeling

Aragones, Xavier, Mateo, Diego, Barajas, Enrique, Crespo-Yepes, Albert, Rodriguez, Rosana, Martin-Martinez, Javier, Nafria, Montserrat

Year:

2019

Language:

english

File:

PDF, 584 KB

english, 2019

45

[IEEE 2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) - Lausanne, Switzerland (2019.7.15-2019.7.18)] 2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) - An IC Array for the Statistical Characterization of Time-Dependent Variability of Basic Circuit Blocks

Martin-Lloret, P., Nunez, J., Roca, E., Castro-Lopez, R., Martin-Martinez, J., Rodriguez, R., Nafria, M., Fernandez, F.V.

Year:

2019

Language:

english

File:

PDF, 789 KB

english, 2019

46

Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions

E. Amat, R. Rodríguez, M. Nafría, X. Aymerich, J.H. Stathis

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 144 KB

english, 2007

47

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

Miranda, E., Sune, J., Rodriguez, R., Nafria, M., Aymerich, X., Fonseca, L., Campabadal, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 190 KB

english, 2000

48

Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

Maji, D., Crupi, F., Amat, E., Simoen, E., De Jaeger, B., Brunco, D.P., Manoj, C.R., Rao, V.R., Magnone, P., Giusi, G., Pace, C., Pantisano, L., Mitard, J., Rodriguez, R., Nafria, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 344 KB

english, 2009

49

Renal Papillary Necrosis Induced by Flurbiprofen

Nafría, Esteve Colomé, Solans, Roser, Espinach, Joan, Delgadillo, Joaquim, Fonollosa, Vicenç

Journal:

Year:

1991

Language:

english

File:

PDF, 381 KB

english, 1991

50

Metal oxide resistive memory switching mechanism based on conductive filament properties

Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., Nafria, M.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 3.53 MB

english, 2011

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